The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 10^12 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

Z axis RFID SMD Coil for NFC – 2.2Uh – ZC1003HF-00022K

High Flex USB3.1 Gen1 A/M-A/M Pure AOC with Metal Housing

Ultra-Low Power Real-Time Clock I2C Interface Integrated Circuit with Power Management

Apollo2 EVB: AMAPH1KK-KBR Evaluation Board, On-board Segger J-Link Debug, USB Cable