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Fujitsu Semiconductor Memory Solution Inc.
The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 10^12 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
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KFEU believes that innovation creates opportunity. We have in addition expertise across the automotive, industrial, medical & fitness, IoT and entertainment markets. Our core business comprises reselling and consulting activities as well as being a gateway to new markets due to our global network.
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Technical innovation creates opportunities, drives progress and is at the core of our global economies. Yet innovation has many obstacles. Our vision encompasses a world without barriers for innovation.
