MB85AS12MTPW-GAERE1: ReRAM, 12Mb, SPI, WLCSP11 Type-A

MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864 words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI). MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.
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MB85AS12MTPW-GAERE1: ReRAM, 12Mb, SPI, WLCSP11 Type-A

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MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864 words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI). MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.

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