MB85AS8MTPW-G-KBAERE1: ReRAM, 8Mb, SPI, WLCSP11 Type-A
MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologiesfor forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI).MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.
Key features
- 576 words x 8 bits
- Interface :SPI
- Memory conf.: 8 Mbits 1
- Memory size: 8Mb
- Operating freq. :10MHz
- R/W cycles: -
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
Quantity
Price:
hidden
(excl. VAT)
Price breaks
Hidden
Stock availability
Out of stock
Supplier lead time
33.0 weeks
Specs
Full list of Product features
- 576 words x 8 bits
- Interface :SPI
- Memory conf.: 8 Mbits 1
- Memory size: 8Mb
- Operating freq. :10MHz
- R/W cycles: -
- Supply range :1.60 - 3.6 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologiesfor forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI).MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.
Products you may need
Compatible products
RAMXEED LIMITED
MB85AS8MTPW-G-KBAERE1: ReRAM, 8Mb, SPI, WLCSP11 Type-A
MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologiesfor forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI).MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.
Out of stock
RAMXEED LIMITED
MB85RC256TYPN-GS-AWE1: FeRAM, 256Kb, I2C, DFN8
The MB85RC256TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256TY is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC256TY has improved to be at least 10^13 cycles, significantly outperforming other nonvolatile memory products in the number.
Out of stock
RAMXEED LIMITED
MB85RC256VPF-G-BCERE1: FeRAM, 256Kb, I2C, SOP8 (208mil)
The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.
Out of stock
RAMXEED LIMITED
MB85RC256VPF-G-BCE1: FeRAM, 256Kb, I2C, SOP8 (208mil)
The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.
Out of stock
