MB85AS8MTPW-G-KBBERE1: ReRAM, 8Mb, SPI, WLCSP11 Type-B

MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologiesfor forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI).MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.
Key features
Applications
MB85AS8MTPW-G-KBBERE1: ReRAM, 8Mb, SPI, WLCSP11 Type-B

Out of stock

Quantity
Price:

hidden

(excl. VAT)
Price breaks
Hidden
Stock availability

Out of stock

Supplier lead time
33.0 weeks
Specs

Full list of Product features

download center

Documents

Datasheet
Datasheet MB85AS8MT-DS501-00060-2v2-E.pdf
More info

Detailed product description

MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologiesfor forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI).MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.

Products you may need

Compatible products

RAMXEED LIMITED

MB85AS8MTPW-G-KBBERE1: ReRAM, 8Mb, SPI, WLCSP11 Type-B

MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologiesfor forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI).MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.

Out of stock

RAMXEED LIMITED

MB85RC64TAPNF-G-BDERE1: FeRAM, 64Kb, I2C, SOP8 (150mil)

The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.

Out of stock

RAMXEED LIMITED

MB85RC64APNF-G-JNERE1: FeRAM, 64Kb, I2C, SOP8 (150mil)

The MB85RC64A is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 10^12 cycles, significantly outperforming Flash memory and E2PROM in the number.

Out of stock

RAMXEED LIMITED

MB85RC64PNF-G-JNE1: FeRAM, 64Kb, I2C, SOP8 (150mil)

The MB85RC64A is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 10^12 cycles, significantly outperforming Flash memory and E2PROM in the number.

In stock

Scroll to Top
KAGA FEI Europe GmbH white logo

Get in Contact!