MB85AS8MTPW-G-KBCERE1: ReRAM, 8Mb, SPI, WLCSP11 Type-C
MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologiesfor forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI).MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.
Key features
- 576 words x 8 bits
- Interface :SPI
- Memory conf.: 8 Mbits 1
- Memory size: 8Mb
- Operating freq. :10MHz
- R/W cycles: -
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
MB85AS8MTPW-G-KBCERE1: ReRAM, 8Mb, SPI, WLCSP11 Type-C
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Specs
Full list of Product features
- 576 words x 8 bits
- Interface :SPI
- Memory conf.: 8 Mbits 1
- Memory size: 8Mb
- Operating freq. :10MHz
- R/W cycles: -
- Supply range :1.60 - 3.6 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologiesfor forming the nonvolatile memory cells. MB85AS8MT adopts the Serial Peripheral Interface (SPI).MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS8MT can be used for 1 x 10^6 rewrite operations.
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