MB85R1001ANC-GE1: FeRAM, 1Mb, Parallel, TSOP48
The MB85R1001A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
Key features
- 072 words x 8 bits
- Interface :Parallel
- Memory conf.: 131
- Memory size: 1Mb
- Operating freq. :-
- R/W cycles: 10^10
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
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Availability: 128 in stock
Supplier lead time
29.0 weeks
Specs
Full list of Product features
- 072 words x 8 bits
- Interface :Parallel
- Memory conf.: 131
- Memory size: 1Mb
- Operating freq. :-
- R/W cycles: 10^10
- Supply range :3.0 - 3.6 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
The MB85R1001A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
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