MB85R256FPFCN-G-BNDE1: FeRAM, 256Kb, Parallel, TSOP28
The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 10^12 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
Key features
- 768 words x 8 bits
- Interface :Parallel
- Memory conf.: 32
- Memory size: 256Kb
- Operating freq. :-
- R/W cycles: 10^12
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
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Supplier lead time
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Specs
Full list of Product features
- 768 words x 8 bits
- Interface :Parallel
- Memory conf.: 32
- Memory size: 256Kb
- Operating freq. :-
- R/W cycles: 10^12
- Supply range :2.7 - 3.6 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 10^12 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
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