MB85R4002ANC-GE1: FeRAM, 4Mb, Parallel, TSOP48
The MB85R4002A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4002A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
Key features
- 144 words x 16 bits
- Interface :Parallel
- Memory conf.: 262
- Memory size: 4Mb
- Operating freq. :-
- R/W cycles: 10^10
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
Quantity
Price:
hidden
(excl. VAT)
Price breaks
Hidden
Stock availability
Availability: 128 in stock
Supplier lead time
29.0 weeks
Specs
Full list of Product features
- 144 words x 16 bits
- Interface :Parallel
- Memory conf.: 262
- Memory size: 4Mb
- Operating freq. :-
- R/W cycles: 10^10
- Supply range :3.0 - 3.6 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
The MB85R4002A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4002A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
Products you may need
Compatible products
RAMXEED LIMITED
MB85R4002ANC-GE1: FeRAM, 4Mb, Parallel, TSOP48
The MB85R4002A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4002A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
RAMXEED LIMITED
MB85RC64TAPNF-G-AWERE2: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
RAMXEED LIMITED
MB85RC16VPNF-G-AWERE2: FeRAM, 16Kb, I2C, SOP8 (150mil)
The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike
RAMXEED LIMITED
MB85RC04VPNF-G-JNE1: FeRAM, 4Kb, I2C, SOP8 (150mil)
The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.