MB85R4M2TFN-G-JAE2: FeRAM, 4Mb, Parallel, TSOP44
The MB85R4M2T is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4M2T can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and
Key features
- 144 words x 16 bits
- Interface :Parallel
- Memory conf.: 262
- Memory size: 4Mb
- Operating freq. :-
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
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Availability: 262 in stock
Supplier lead time
33.0 weeks
Specs
Full list of Product features
- 144 words x 16 bits
- Interface :Parallel
- Memory conf.: 262
- Memory size: 4Mb
- Operating freq. :-
- R/W cycles: 10^13
- Supply range :1.8 - 3.6 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
The MB85R4M2T is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4M2T can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and
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