MB85R8M1TAFN-G-JAE2: FeRAM, 8Kb, Parallel, TSOP44
The MB85R8M1TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 1,048,576 words x 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M1TA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R8M1TA can be used for 1014 read/write operations for 64bits, which is a significant improvement over the number of read and write operations supported by Flash memory and
Key features
- 576 words x 8 bits
- Interface :Parallel
- Memory conf.: 1
- Memory size: 8Kb
- Operating freq. :-
- R/W cycles: 10^14
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
Quantity
Price:
hidden
(excl. VAT)
Price breaks
Hidden
Stock availability
Out of stock
Supplier lead time
33.0 weeks
Specs
Full list of Product features
- 576 words x 8 bits
- Interface :Parallel
- Memory conf.: 1
- Memory size: 8Kb
- Operating freq. :-
- R/W cycles: 10^14
- Supply range :1.8 - 3.6 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
The MB85R8M1TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 1,048,576 words x 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M1TA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R8M1TA can be used for 1014 read/write operations for 64bits, which is a significant improvement over the number of read and write operations supported by Flash memory and
Products you may need
Compatible products
Fujitsu Semiconductor Memory Solution Inc.
MB85R8M1TAFN-G-JAE2: FeRAM, 8Kb, Parallel, TSOP44
The MB85R8M1TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 1,048,576 words x 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M1TA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R8M1TA can be used for 1014 read/write operations for 64bits, which is a significant improvement over the number of read and write operations supported by Flash memory and
Fujitsu Semiconductor Memory Solution Inc.
MB85RC64TAPNF-G-AWERE2: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
Fujitsu Semiconductor Memory Solution Inc.
MB85RC64TAPNF-G-BDE1: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
Fujitsu Semiconductor Memory Solution Inc.
MB85RC04PNF-G-JNE1: FeRAM, 4Kb, I2C, SOP8 (150mil)
The MB85RC04 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04 is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC04 has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.