MB85RC16PN-G-AMERE1: FeRAM, 16Kb, I2C, SON8
The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery. The memory cells used in the MB85RC16 have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike
Key features
- 048 words x 8 bits
- Interface :I2C
- Memory conf.: 2
- Memory size: 16Kb
- Operating freq. :1MHz
- R/W cycles: 10^12
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
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Supplier lead time
29.0 weeks
Specs
Full list of Product features
- 048 words x 8 bits
- Interface :I2C
- Memory conf.: 2
- Memory size: 16Kb
- Operating freq. :1MHz
- R/W cycles: 10^12
- Supply range :2.7 - 3.6 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery. The memory cells used in the MB85RC16 have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike
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