MB85RC256VPF-G-BCE1: FeRAM, 256Kb, I2C, SOP8 (208mil)
The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.
Key features
- 768 words x 8 bits
- Interface :I2C
- Memory conf.: 32
- Memory size: 256Kb
- Operating freq. :1MHz
- R/W cycles: 10^12
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
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Supplier lead time
33.0 weeks
Specs
Full list of Product features
- 768 words x 8 bits
- Interface :I2C
- Memory conf.: 32
- Memory size: 256Kb
- Operating freq. :1MHz
- R/W cycles: 10^12
- Supply range :2.7 - 5.5 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.
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