MB85RC512LYPN-GS-AWE1: FeRAM, 512Kb, I2C, DFN8
The MB85RC512LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512LY is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC512LY has improved to be at least 10^13 cycles, significantly outperforming other nonvolatile memory products in the number.
Key features
- 536 words x 8 bits
- Interface :I2C
- Memory conf.: 65
- Memory size: 512Kb
- Operating freq. :3.4MHz
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
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Supplier lead time
46.0 weeks
Specs
Full list of Product features
- 536 words x 8 bits
- Interface :I2C
- Memory conf.: 65
- Memory size: 512Kb
- Operating freq. :3.4MHz
- R/W cycles: 10^13
- Supply range :1.7 - 1.95 V
- Temperature range :-40 - 125 °C
More info
Detailed product description
The MB85RC512LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512LY is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC512LY has improved to be at least 10^13 cycles, significantly outperforming other nonvolatile memory products in the number.
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