MB85RC512LYPN-GS-AWEWE1: FeRAM, 512Kb, I2C, DFN8

The MB85RC512LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512LY is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC512LY has improved to be at least 10^13 cycles, significantly outperforming other nonvolatile memory products in the number.
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MB85RC512LYPN-GS-AWEWE1: FeRAM, 512Kb, I2C, DFN8

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Datasheet MB85RC512LY-DS501-00089-1v0-E.pdf
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The MB85RC512LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512LY is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC512LY has improved to be at least 10^13 cycles, significantly outperforming other nonvolatile memory products in the number.

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