MB85RC64TAPNF-G-AWE2: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
Key features
- 192 words x 8 bits
- Interface :I2C
- Memory conf.: 8
- Memory size: 64Kb
- Operating freq. :3.4MHz
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
Quantity
Price:
hidden
(excl. VAT)
Price breaks
Hidden
Stock availability
Out of stock
Supplier lead time
36.0 weeks
Specs
Full list of Product features
- 192 words x 8 bits
- Interface :I2C
- Memory conf.: 8
- Memory size: 64Kb
- Operating freq. :3.4MHz
- R/W cycles: 10^13
- Supply range :1.8 - 3.6 V
- Temperature range :-40 - 105 °C
More info
Detailed product description
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
Products you may need
Compatible products
Fujitsu Semiconductor Memory Solution Inc.
MB85RC64TAPNF-G-AWE2: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
Fujitsu Semiconductor Memory Solution Inc.
MB85RC16PNF-G-JNE1: FeRAM, 16Kb, I2C, SOP8 (150mil)
The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery. The memory cells used in the MB85RC16 have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike
Fujitsu Semiconductor Memory Solution Inc.
MB85RC64TAPNF-G-BDERE1: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
Fujitsu Semiconductor Memory Solution Inc.
MB85RC64APNF-G-JNE1: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64A is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 10^12 cycles, significantly outperforming Flash memory and E2PROM in the number.