MB85RC64VPNF-G-JNERE1: FeRAM, 64Kb, I2C, SOP8 (150mil)

The MB85RC64V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.
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MB85RC64VPNF-G-JNERE1: FeRAM, 64Kb, I2C, SOP8 (150mil)

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Datasheet MB85RC64V-DS501-00013-8v0-E.pdf
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The MB85RC64V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.

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