MB85RQ4MLPF-G-BCE1: FeRAM, 4Mb, Dual & Quad SPI, SOIC16 (300mil)
MB85RQ4ML is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RQ4ML adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O). The MB85RQ4ML is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RQ4ML can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RQ4ML does not take long time to write data like Flash memories or E2PROM. MB85RQ4ML is able to write data at a high bandwidth without any waiting time and fits perfectly into
Key features
- 288 words x 8 bits
- Interface :Dual &nQuad SPI
- Memory conf.: 524
- Memory size: 4Mb
- Operating freq. :108MHz
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
MB85RQ4MLPF-G-BCE1: FeRAM, 4Mb, Dual &
Quad SPI, SOIC16 (300mil)
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Supplier lead time
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Specs
Full list of Product features
- 288 words x 8 bits
- Interface :Dual &nQuad SPI
- Memory conf.: 524
- Memory size: 4Mb
- Operating freq. :108MHz
- R/W cycles: 10^13
- Supply range :1.7 - 1.95 V
- Temperature range :-40 - 85 °C
More info
Detailed product description
MB85RQ4ML is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RQ4ML adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O). The MB85RQ4ML is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RQ4ML can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RQ4ML does not take long time to write data like Flash memories or E2PROM. MB85RQ4ML is able to write data at a high bandwidth without any waiting time and fits perfectly into
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