MB85RQ8MLXPF-G-BCERE1: FeRAM, 8Mb, Dual & Quad SPI, SOIC16 (300mil)
MB85RQ8MLX is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 1,048,576 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RQ8MLX adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O). The MB85RQ8MLX is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RQ8MLX can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RQ8MLX does not take long time to write data like Flash memories or E2PROM. MB85RQ8MLX is able to write data at a high bandwidth without any waiting time and fits perfectly into
Key features
- 576 words x 8 bits
- Interface :Dual &nQuad SPI
- Memory conf.: 1
- Memory size: 8Mb
- Operating freq. :108MHz
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
Quantity
Price:
hidden
(excl. VAT)
Price breaks
Hidden
Stock availability
Out of stock
Supplier lead time
33.0 weeks
Specs
Full list of Product features
- 576 words x 8 bits
- Interface :Dual &nQuad SPI
- Memory conf.: 1
- Memory size: 8Mb
- Operating freq. :108MHz
- R/W cycles: 10^13
- Supply range :1.7 - 1.95 V
- Temperature range :-40 - 105 °C
More info
Detailed product description
MB85RQ8MLX is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 1,048,576 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RQ8MLX adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O). The MB85RQ8MLX is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RQ8MLX can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RQ8MLX does not take long time to write data like Flash memories or E2PROM. MB85RQ8MLX is able to write data at a high bandwidth without any waiting time and fits perfectly into
Products you may need
Compatible products
RAMXEED LIMITED
MB85RQ8MLXPF-G-BCERE1: FeRAM, 8Mb, Dual & Quad SPI, SOIC16 (300mil)
MB85RQ8MLX is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 1,048,576 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RQ8MLX adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O). The MB85RQ8MLX is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RQ8MLX can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RQ8MLX does not take long time to write data like Flash memories or E2PROM. MB85RQ8MLX is able to write data at a high bandwidth without any waiting time and fits perfectly into
RAMXEED LIMITED
MB85RC64TAPNF-G-AWERE2: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
RAMXEED LIMITED
MB85RC64APNF-G-JNERE1: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64A is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 10^12 cycles, significantly outperforming Flash memory and E2PROM in the number.
RAMXEED LIMITED
MB85RC16PNF-G-JNERE1: FeRAM, 16Kb, I2C, SOP8 (150mil)
The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery. The memory cells used in the MB85RC16 have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike