MB85RQ8MXPF-G-BCE1: FeRAM, 8Mb, Dual & Quad SPI, SOIC16 (300mil)

MB85RQ8MX is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 1,048,576 words x 8 bits. MB85RQ8MX adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O). The MB85RQ8MX is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RQ8MX can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RQ8MX does not take long time to write data like Flash memories or E2PROM. MB85RQ8MX is able to write data at a high bandwidth without any waiting time and fits perfectly into
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MB85RQ8MXPF-G-BCE1: FeRAM, 8Mb, Dual & Quad SPI, SOIC16 (300mil)

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Datasheet MB85RQ8MX-DS501-00074-1v0-E.pdf
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MB85RQ8MX is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 1,048,576 words x 8 bits. MB85RQ8MX adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O). The MB85RQ8MX is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RQ8MX can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RQ8MX does not take long time to write data like Flash memories or E2PROM. MB85RQ8MX is able to write data at a high bandwidth without any waiting time and fits perfectly into

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