MB85RS16NPN-G-AMEWE1: FeRAM, 16Kb, SPI, SON8

MB85RS16N is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS16N adopts the Serial Peripheral Interface (SPI). The MB85RS16N is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS16N can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
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MB85RS16NPN-G-AMEWE1: FeRAM, 16Kb, SPI, SON8

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Datasheet MB85RS16N-DS501-00030-4v0-E.pdf
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MB85RS16N is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS16N adopts the Serial Peripheral Interface (SPI). The MB85RS16N is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS16N can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

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