MB85RS1MTPNF-G-JNERE1: FeRAM, 1Mb, SPI, SOP8 (150mil)

MB85RS1MT is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS1MT adopts the Serial Peripheral Interface (SPI). The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS1MT can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
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MB85RS1MTPNF-G-JNERE1: FeRAM, 1Mb, SPI, SOP8 (150mil)

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Datasheet MB85RS1MT-DS501-00022-9v0-E.pdf
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MB85RS1MT is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS1MT adopts the Serial Peripheral Interface (SPI). The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS1MT can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

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