MB85RS256LYAPN-G-AWE1: FeRAM, 256Kb, SPI, DFN8
MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS256LYA adopts the Serial Peripheral Interface (SPI). The MB85RS256LYA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256LYA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS256LYA does not need any waiting time in writing process, the write cycle time of MB85RS256-
Key features
- 768 words x 8 bits
- Interface :SPI
- Memory conf.: 32
- Memory size: 256Kb
- Operating freq. :50MHz
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
Quantity
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Stock availability
Out of stock
Supplier lead time
42.0 weeks
Specs
Full list of Product features
- 768 words x 8 bits
- Interface :SPI
- Memory conf.: 32
- Memory size: 256Kb
- Operating freq. :50MHz
- R/W cycles: 10^13
- Supply range :1.7 - 1.95 V
- Temperature range :-40 - 125 °C
More info
Detailed product description
MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS256LYA adopts the Serial Peripheral Interface (SPI). The MB85RS256LYA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256LYA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS256LYA does not need any waiting time in writing process, the write cycle time of MB85RS256-
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