MB85RS256TYAPN-GS-AWE1: FeRAM, 256Kb, SPI, DFN8

MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS256TYA adopts the Serial Peripheral Interface (SPI). The MB85RS256TYA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256TYA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS256TYA does not need any waiting time in writing process, the write cycle time of
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MB85RS256TYAPN-GS-AWE1: FeRAM, 256Kb, SPI, DFN8

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Datasheet MB85RS256TYA-DS501-00073-1v1-E.pdf
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MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS256TYA adopts the Serial Peripheral Interface (SPI). The MB85RS256TYA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256TYA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS256TYA does not need any waiting time in writing process, the write cycle time of

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