MB85RS256TYPNF-G-BCERE1: FeRAM, 256Kb, SPI, SOP8 (150mil)
MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS256TYA adopts the Serial Peripheral Interface (SPI). The MB85RS256TYA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256TYA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS256TYA does not need any waiting time in writing process, the write cycle time of
Key features
- 768 words x 8 bits
- Interface :SPI
- Memory conf.: 32
- Memory size: 256Kb
- Operating freq. :50MHz
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
Quantity
Price:
hidden
(excl. VAT)
Price breaks
Hidden
Stock availability
Out of stock
Supplier lead time
33.0 weeks
Specs
Full list of Product features
- 768 words x 8 bits
- Interface :SPI
- Memory conf.: 32
- Memory size: 256Kb
- Operating freq. :50MHz
- R/W cycles: 10^13
- Supply range :1.8 - 3.6 V
- Temperature range :-40 - 125 °C
More info
Detailed product description
MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS256TYA adopts the Serial Peripheral Interface (SPI). The MB85RS256TYA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256TYA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS256TYA does not need any waiting time in writing process, the write cycle time of
Products you may need
Compatible products
RAMXEED LIMITED
MB85RS256TYPNF-G-BCERE1: FeRAM, 256Kb, SPI, SOP8 (150mil)
MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS256TYA adopts the Serial Peripheral Interface (SPI). The MB85RS256TYA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256TYA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS256TYA does not need any waiting time in writing process, the write cycle time of
RAMXEED LIMITED
MB85RC64TAPN-G-AMEWE1: FeRAM, 64Kb, I2C, SON8
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
RAMXEED LIMITED
MB85RC64TAPNF-G-AWE2: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
RAMXEED LIMITED
MB85RC16VPNF-G-AWE2: FeRAM, 16Kb, I2C, SOP8 (150mil)
The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike