MB85RS2MLYPN-G-AWEWE1: FeRAM, 2Mb, SPI, DFN8

MB85RS2MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment appli- cations. MB85RS2MLY adopts the Serial Peripheral Interface (SPI). The MB85RS2MLY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS2MLY can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
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MB85RS2MLYPN-G-AWEWE1: FeRAM, 2Mb, SPI, DFN8

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Datasheet MB85RS2MLY-DS501-00064-3v1-E.pdf
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MB85RS2MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment appli- cations. MB85RS2MLY adopts the Serial Peripheral Interface (SPI). The MB85RS2MLY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS2MLY can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

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