MB85RS2MTAPNF-G-BDE1: FeRAM, 2Mb, SPI, SOP8 (150mil)

MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI). The MB85RS2MTA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS2MTA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
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MB85RS2MTAPNF-G-BDE1: FeRAM, 2Mb, SPI, SOP8 (150mil)

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Datasheet MB85RS2MTA-DS501-00032-6v0-E.pdf
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MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI). The MB85RS2MTA is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS2MTA can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

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