MB85RS512LYPN-G-AWEWE1: FeRAM, 512Kb, SPI, DFN8
MB85RS512LY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS512LY adopts the Serial Peripheral Interface (SPI). The MB85RS512LY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS512LY can be used for 10^13 improvement over the number of read and write operations sup ported by Flash memory and E2PROM. read/write operations, which is a significant ported by Flash memory and E2PROM.
Key features
- 536 words x8 bits
- Interface :SPI
- Memory conf.: 65
- Memory size: 512Kb
- Operating freq. :50MHz
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
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Stock availability
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Supplier lead time
42.0 weeks
Specs
Full list of Product features
- 536 words x8 bits
- Interface :SPI
- Memory conf.: 65
- Memory size: 512Kb
- Operating freq. :50MHz
- R/W cycles: 10^13
- Supply range :1.7 - 1.95 V
- Temperature range :-40 - 125 °C
More info
Detailed product description
MB85RS512LY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS512LY adopts the Serial Peripheral Interface (SPI). The MB85RS512LY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS512LY can be used for 10^13 improvement over the number of read and write operations sup ported by Flash memory and E2PROM. read/write operations, which is a significant ported by Flash memory and E2PROM.
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