MB85RS512TPNF-G-AWERE2: FeRAM, 512Kb, SPI, SOP8 (150mil)

MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS512TY adopts the Serial Peripheral Interface (SPI). The MB85RS512TY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS512TY can be used for 10^13 improvement over the number of read and write operations sup ported by Flash memory and E2PROM. read/write operations, which is a significant ported by Flash memory and E2PROM.
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MB85RS512TPNF-G-AWERE2: FeRAM, 512Kb, SPI, SOP8 (150mil)

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Datasheet MB85RS512TY-DS501-00082-0v1-E.pdf
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MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MB85RS512TY adopts the Serial Peripheral Interface (SPI). The MB85RS512TY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS512TY can be used for 10^13 improvement over the number of read and write operations sup ported by Flash memory and E2PROM. read/write operations, which is a significant ported by Flash memory and E2PROM.

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