MB85RS64VPNF-G-JNERE1: FeRAM, 64Kb, SPI, SOP8 (150mil)

MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64V adopts the Serial Peripheral Interface (SPI). The MB85RS64V is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS64V can be used for 10^12 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
Key features
Applications
MB85RS64VPNF-G-JNERE1: FeRAM, 64Kb, SPI, SOP8 (150mil)

Out of stock

Quantity
Price:

hidden

(excl. VAT)
Price breaks
Hidden
Stock availability

Out of stock

Supplier lead time
33.0 weeks
Specs

Full list of Product features

download center

Documents

Datasheet
Datasheet MB85RS64V-DS501-00015-6v0-E.pdf
More info

Detailed product description

MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64V adopts the Serial Peripheral Interface (SPI). The MB85RS64V is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS64V can be used for 10^12 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

Products you may need

Compatible products

Fujitsu Semiconductor Memory Solution Inc.

MB85RS64VPNF-G-JNERE1: FeRAM, 64Kb, SPI, SOP8 (150mil)

MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64V adopts the Serial Peripheral Interface (SPI). The MB85RS64V is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS64V can be used for 10^12 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

Out of stock

Fujitsu Semiconductor Memory Solution Inc.

MB85RC64TAPNF-G-BDE1: FeRAM, 64Kb, I2C, SOP8 (150mil)

The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.

In stock

Fujitsu Semiconductor Memory Solution Inc.

MB85RC64PNF-G-JNERE1: FeRAM, 64Kb, I2C, SOP8 (150mil)

The MB85RC64A is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 10^12 cycles, significantly outperforming Flash memory and E2PROM in the number.

In stock

Fujitsu Semiconductor Memory Solution Inc.

MB85RC04VPNF-G-JNERE1: FeRAM, 4Kb, I2C, SOP8 (150mil)

The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.

In stock

Scroll to Top
KAGA FEI Europe GmbH white logo

Get in Contact!