MB85RS64VYPNF-GS-BCE1: FeRAM, 64Kb, SPI, SOP8 (150mil)
MB85RS64VY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automotive applications. MB85RS64VY adopts the Serial Peripheral Interface (SPI). The MB85RS64VY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS64VY can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
Key features
- 192 words x 8 bits
- Interface :SPI
- Memory conf.: 8
- Memory size: 64Kb
- Operating freq. :33MHz
- R/W cycles: 10^13
Applications
- BMS
- CNC
- eCall
- Instrument Cluster
- Robots
- Rotary Encoder
MB85RS64VYPNF-GS-BCE1: FeRAM, 64Kb, SPI, SOP8 (150mil)
In stock
Quantity
Price:
hidden
(excl. VAT)
Price breaks
Hidden
Stock availability
Availability: 85 in stock
Supplier lead time
36.0 weeks
Specs
Full list of Product features
- 192 words x 8 bits
- Interface :SPI
- Memory conf.: 8
- Memory size: 64Kb
- Operating freq. :33MHz
- R/W cycles: 10^13
- Supply range :2.7 - 5.5 V
- Temperature range :-40 - 125 °C
More info
Detailed product description
MB85RS64VY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automotive applications. MB85RS64VY adopts the Serial Peripheral Interface (SPI). The MB85RS64VY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS64VY can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
Products you may need
Compatible products
Fujitsu Semiconductor Memory Solution Inc.
MB85RS64VYPNF-GS-BCE1: FeRAM, 64Kb, SPI, SOP8 (150mil)
MB85RS64VY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automotive applications. MB85RS64VY adopts the Serial Peripheral Interface (SPI). The MB85RS64VY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS64VY can be used for 10^13 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
In stock
Fujitsu Semiconductor Memory Solution Inc.
MB85RC64TAPNF-G-JNE2: FeRAM, 64Kb, I2C, SOP8 (150mil)
The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 10^13 cycles, significantly outperforming Flash memory and E2PROM in the number.
Out of stock
Fujitsu Semiconductor Memory Solution Inc.
MB85RC16VPNF-G-AWERE2: FeRAM, 16Kb, I2C, SOP8 (150mil)
The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike
Out of stock
Fujitsu Semiconductor Memory Solution Inc.
MB85RC16VPNF-G-JNN1ERE1: FeRAM, 16Kb, I2C, SOP8 (150mil)
The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike
Out of stock