The TP65H035WS 650V, 35mฮฉ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologiesโoffering superior reliability and performance
The TP65H035WS 650V, 35mฮฉ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologiesโoffering superior reliability and performance
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TP65H035G4WS
The TP65H035WS 650V, 35mฮฉ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologiesโoffering superior reliability and performance