TP65H035G4WS

The TP65H035WS 650V, 35mฮฉ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologiesโ€”offering superior reliability and performance
Key features
No key features found
Applications
TP65H035G4WS

Out of stock

Quantity
Price:

hidden

(excl. VAT)
Price breaks
Hidden
Stock availability

Out of stock

Supplier lead time
10 weeks
Specs

Full list of Product features

No data was found
download center

Documents

No documents fount
More info

Detailed product description

The TP65H035WS 650V, 35mฮฉ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologiesโ€”offering superior reliability and performance

Products you may need

Compatible products

Transphorm

TP65H035G4WS

The TP65H035WS 650V, 35mฮฉ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologiesโ€”offering superior reliability and performance

Out of stock

AMBIQ

Apollo2: AMAPHEVBUltra low power MCU EVB

Apollo2 EVB: AMAPH1KK-KBR Evaluation Board, On-board Segger J-Link Debug, USB Cable

Out of stock

AMBIQ

Apollo4 Blue Plus: AMA4B2KP-KBRUltra low power MCU

Apollo4 Blue Plus, M4 192MHz, BLE5.1, 2MB MRAM, 2.75MB SRAM, MIPI, 1 ANA/4 DIG MIC, I2S, BGA

Out of stock

AMBIQ

Apollo3 Blue: AMA3B1KK-KCR-B0Ultra low power MCU

Apollo3 Blue 96 MHz Cortex M4F, 1024KB Flash, 384KB RAM, BLE5, 66-pin CSP, B0

Out of stock

Scroll to Top
KAGA FEI Europe GmbH white logo

Get in Contact!