Technologies

MRAM

MRAM stands for Magnetoresistive Random Access Memory. This is a type of non-volatile random access memory technology, which stores data in magnetic domains. MRAM demonstrates the advantages of a volatile memory (such as access speed) and virtually unlimited endurance as well. MRAM memory cell consists of a magnetic tunnel junction, which stores the data based on the polarization of the ferromagnetic material and reads the data based on the consequential electrical resistance of the memory cell. No refresh is required to retain the data. STT (spin-transfer torque) is a new generation of MRAM, using spin-polarized electrons to change the state of the magnetic parameters. This technology provides MRAM with a much higher density scalability at lower cost and more efficiency. STT MRAM requires much less power as well.

Netsol MRAM

Applications

MRAM Products are ideal for applications that must store and retrieve data and programs quickly and frequently due to its non-volatility, virtually unlimited endurance, and fast-write characteristics.

They are suited for code storage, data logging, backup memory and working memory in industrial designs.

Possible applications are:

Smart meters, industrial PC, HMI, PLC, gaming machines, medical devices, enterprise data storage, IoT and Automotive.

Netol MRAM Portfolio

Serial STT MRAM

Up to 32Mbit density
71V ~ 1.98V or 2.7V ~ 3.6V
Single, Dual and Quad SPI with SDR and DDR Serial interface Compatible
Data Retention: 10 years
Read Endurance: unlimited.
Write Endurance: 10¹⁴
No external ECC required.
Industry Standard Pin-out and Packages: 8WSON, 8SOP

Parallel STT MRAM

Up to 64Mb Density
71V ~ 1.98V or 2.7V ~ 3.6V
Parallel asynchronous interface x16/x8 I/O
page read/write function for high performance.
Data Retention: 10 years
Read Endurance: unlimited
Write Endurance: 10¹⁴
No external ECC required.
Package Type: 48FBGA, 44TSOP2, 54TSOP2

Company overview

The benefits of MRAM

Non-Volatility

eliminates voltage controller, battery and capacitor

Fast write

fulfills high performance requirements; ensures data integrity at sudden power failure

High endurance

virtually no limit on write endurance (100 trillion write cycles). Enables real time logging

Long data retention and high reliability

10 years

Scalability

for high memory density

How it works

MRAM memory cell consists of a magnetic tunnel junction (MTJ), which stores the bits of data. MTJ comprises of two layers of ferromagnetic materials: the reference layer and the free layer. The reference layer is also called the fixed layer because its magnetic direction never changes. The orientation of the free layer can be changed when bias is applied to the MTJ. The orientation of the two magnetic layers determines whether the binary bit is a1 or 0.

The reading process is accomplished by measuring the electrical resistance of the MTJ cell. Typically, if the two layers have the same magnetic orientation, the resistance is low. This is considered to mean “1”. If the orientation of the two layers is anti-parallel, then the resistance is higher. This would mean “0”.

MRAM

Netsol MRAM

Applications