NAND Flash


NAND Flash highlights
Parallel SLC NAND: Portfolio
SkyHigh: ONFI SLC NAND
- Density: 1Gbit โ 16Gbit
- Voltage: 3V / 1,8V;
- Bus width: 8bit, 16bit
- TSOP-48, BGA-63, BGA-67
- 100k P/E cycles
- -40ยฐC to 85ยฐC; -40ยฐC to 105ยฐC
Longsys: ONFI SLC NAND
- Density: 1Gbit โ 8Gbit
- Voltage: 3V / 1,8V;
- Bus width: 8bit,
- TSOP-8, BGA63
- 100k P/E cycles
- -40ยฐC to 85ยฐC
Serial NAND: Portfolio
SkyHigh Memory SPI NAND
- 1Gbit โ 4Gbit, 3V
- Up to 104MHz
- LGA-8, 16-SOIC, 24-BGA
- 100k P/E cycles
- -40ยฐC to 85ยฐC; -40ยฐC to 105ยฐC
Etron Technology SPI NAND
- 1Gbit โ 8Gbit, 3V & 1.8V
- Up to 120MHz, LGA-8, WSON-8
- 100k P/E cycles
- -40ยฐC to 85ยฐC
Longsys SPI NAND
- 512Mbit โ 4Gbit, 3V & 1.8V
- Up to 133MHz, WSON-8
- -40ยฐC to 85ยฐC
Company overview
The benefits of NAND Flash
Non-Volatility
Data can be maintained for long time without energy source
High density
with relatively low cost
High speed access
through Quad SPI
Data integrity
built-in ECC available; 1bit or 4bit options supported
Data retention
10 years
How it works
Same as NOR Flash, the NAND Flash memory cell utilizes the charge state of a floating gate to store binary information. Data can be read and written in pages, but they can only be erased at the level of entire blocks consisting of multiple pages.
There are different types of NAND Flash:
SLC: single-level cell: stores one bit per cell.
MLC: multiple-level cell: stores two bits per cell
TLC: triple-level cell: stores three bits per cell.
QLC: quad-level cell: stores four bits per cell.